Using a novel variational wave function for the ground state of the shallow donor in a narrow GaAs/ Ga_ ( 1-x) Al_xAs quantum-well, we have calculated the wave function and the binding energy for impurity ground state. 本文采用一种新的变分波函数描述GaAs/Ga(1-x)AlxAs窄量子阱中的浅施主基态,并计算了杂质基态波函数和结合能。